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元器件品牌
2SC3099
[TYSEMI]
Low Noise Figure NF=1.7dB,|S21e|2=15dB(f=500MHz); 低噪声系数NF = 1.7分贝， | S21e | 2 = 15分贝（ F = 500MHz的）
元器件型号：
2SC3099
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
Low Noise Figure NF=1.7dB,|S21e|2=15dB(f=500MHz)
低噪声系数NF = 1.7分贝， | S21e | 2 = 15分贝（ F = 500MHz的）
晶体 晶体管 光电二极管 放大器
PDF文件：
总1页 (文件大小：104K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC3099参数
查看货源
2SC3099(TE85L,F)
RF Small Signal Bipolar Transistor
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TOSHIBA
2SC3101
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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MITSUBISHI
2SC3102
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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156
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399
MITSUBISHI
2SC3102
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
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156
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82
NJSEMI
2SC3103
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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on line
156
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114
MITSUBISHI
2SC3103
RF Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, T-31E, 6 PIN
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156
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0
MITSUBISHI
2SC3104
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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156
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67
MITSUBISHI
2SC3105
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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156
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66
MITSUBISHI
2SC3110
Si NPN Epitaxial Planar
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156
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69
ETC
2SC3110
isc Silicon NPN RF Transistor
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on line
156
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18
ISC
2SC3110TMG
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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156
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0
PANASONIC
2SC3112
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
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156
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39
TOSHIBA
2SC3112
TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS)
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156
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74
TOSHIBA
2SC3112_07
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
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156
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19
TOSHIBA
2SC3112A
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92
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18
ETC
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