2SC3143 [TYSEMI]
High breakdown voltage. Small output capacitance. Collector-base voltage VCBO 180 V; 高击穿电压。小的输出电容。集电极 - 基极电压VCBO 180 V
| 型号： | 2SC3143 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High breakdown voltage. Small output capacitance. Collector-base voltage VCBO 180 V |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
2SC3143
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High breakdown voltage.
Small output capacitance.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
180
Unit
V
160
V
5
V
80
mA
mA
mW
Collector current (pulse)
Collector dissipation
ICP
150
PC
200
Jumction temperature
Storage temperature
Tj
125
Tstg
-55 to +125
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Transistors
Product specification
2SC3143
Electrical Characteristics Ta = 25
Parameter
Symbol
IcBO
IEBO
hFE
Testconditons
VCB = 120V , IE = 0
Min
60
Typ
Max
0.1
Unit
ìA
Collector cutoff current
Emitter cutoff current
VEB = 4V , IC = 0
0.1
ìA
DC current Gain
VCE = 5V , IC = 10 mA
VCE = 10V , IC = 10 mA
VCB = 10V , f = 1MHz
VCE = 5V , IC = 10 mA
270
Gain bandwidth product
fT
150
2.0
MHz
pF
V
Output capacitance
Cob
2.5
1.5
0.7
Base-emitter voltage
VBE
Collector-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 30mA , IB = 3mA
V(BR)CBO IC = 10ìA , IE = 0
V
180
160
5
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
0.18
1.0
ìs
ìs
ìs
tstg
tf
0.2
hFE Classification
K
Marking
Rank
3
4
5
hFE
60 120
90 180
135 270
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sales@twtysemi.com
4008-318-123
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