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2SC3646 [TYSEMI]

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity; 采用FBET的， MBIT流程击穿电压高，电流容量大
2SC3646
元器件型号： 2SC3646
生产厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用：

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
采用FBET的， MBIT流程击穿电压高，电流容量大

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PDF文件： 总3页 (文件大小：562K)
下载文档：  下载PDF数据表文档文件
型号参数：2SC3646参数
 查看货源

2SC3646_15

 NPN Transistors

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0 KEXIN

2SC3646R

 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89

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10 ETC

2SC3646-R

 NPN Transistors

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0 KEXIN

2SC3646S

 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89

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18 ETC

2SC3646S-TD-E

 Bipolar Transistor High breakdown voltage and large current capacity

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1 ONSEMI

2SC3646T

 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89

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17 ETC

2SC3646-T

 NPN Transistors

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0 KEXIN

2SC3646T-TD-E

 Bipolar Transistor High breakdown voltage and large current capacity

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1 ONSEMI

2SC3647

 High-Voltage Switching Applications

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140 SANYO

2SC3647

 High-Voltage Switching Applications

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48 KEXIN

2SC3647

 HIGH-VOLTAGE SWITCHING APPLICATIONS

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21 UTC-IC

2SC3647

 High-Voltage Switching Applications

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41 SANYO

2SC3647

 HIGH-VOLTAGE SWITCHING APPLICATIONS

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98 UTC-IC

2SC3647

 High-Voltage Switching Applications

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58 SANYO

2SC3647

 Bipolar Transistor

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16 ONSEMI
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