2SC4177 [TYSEMI]
High dc current gain High voltage.Collector-base voltage VCBO 60 V; 高直流电流增益高voltage.Collector - 基极电压VCBO 60 V
| 型号： | 2SC4177 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High dc current gain High voltage.Collector-base voltage VCBO 60 V |
| 文件： | 总1页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
2SC4177
Features
High dc current gain
High voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
50
5
V
V
100
mA
mW
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 60V, IE=0
Min
90
Typ
Max
0.1
0.1
600
0.3
1.0
Unit
ìA
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
hFE
VEB = 5V, IC = 0
ìA
DC current gain *
VCE = 6V , IC = 1.0mA
200
0.15
0.86
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base emitter voltage *
VCE(sat) IC = 100mA, IB = 10mA
VBE(sat) IC = 100mA, IB = 10mA
V
V
VBE
fT
VCE = 6V, IC = 1.0mA
VCE = 6V, IE = -10mA
VCE = 6V, IE = 0, f = 1MHz
0.55 0.62 0.65
V
Gain bandwidth product
Output capacitance
250
3.0
MHz
pF
Cob
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
L4
L5
L6
L7
90 180
135 270
200 400
300 600
http://www.twtysemi.com
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