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2SC4213 [TYSEMI]

High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.; 高发射极 - 基极电压： VEBO = 25 V （分钟）。高直流电流增益： hFE参数= 200 1200 。

2SC4213


元器件型号：	2SC4213
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200. 高发射极 - 基极电压： VEBO = 25 V （分钟）。高直流电流增益： hFE参数= 200 1200 。晶体晶体管开关光电二极管
PDF文件：	总1页 (文件大小：76K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC4213参数

2SC4213_07

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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9 TOSHIBA

2SC4213A

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70

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16 ETC

2SC4213A

For Muting and Switching Applications

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11 TOSHIBA

2SC4213-A

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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1 TOSHIBA

2SC4213-A(T5LUPTLF

Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

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0 TOSHIBA

2SC4213-A(TE85L)

2SC4213-A(TE85L)

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0 TOSHIBA

2SC4213-A(TE85L,F)

TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),SC-70

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1 TOSHIBA

2SC4213ATE85L

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4213ATE85R

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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1 TOSHIBA

2SC4213B

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70

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49 ETC

2SC4213-B

For Muting and Switching Applications

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17 TOSHIBA

2SC4213-B

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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1 TOSHIBA

2SC4213BTE85R

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4213TE85L

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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0 TOSHIBA

2SC4214

NPN PLANAR TYPE (UHF TV TUNER RF AMPLIFIER APPLICATIONS)

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55 TOSHIBA

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