2SD1005 [TYSEMI]
World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V.; 世界标准的微型封装形式：SOT -89 。高集电极到基极电压： 100V VCBO 。
| 型号： | 2SD1005 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. |
| 文件： | 总1页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
2SD1005
Features
World standard miniature package: SOT-89.
High collector to base voltage: VCBO 100V.
Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
100
80
Unit
V
Collector-emitter voltage
Emitter-base voltage
V
5
V
Collector current
1
A
Collector current (pulse) *
Total power dissipation
at 25 ambient temperature *
Junction temperature
IC
1.5
A
PT
2
W
Tj
150
Storage temperature
Tstg
-55 to +150
*1. PW 10ìs,duty cycle 50%
*2. When mounted on ceramic substrate of 16cm2 X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
Min
Typ
Max
100
100
400
Unit
nA
VCB = 100V, IE=0
IEBO
VEB = 5V, IC=0
nA
VCE =2V , IC = 100mA
VCE =2V , IC = 500mA
90
25
200
80
DC current gain *
hFE
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
0.15
0.9
630
160
12
0.5
1.5
700
V
V
VBE
fT
VCE =10V , IC = 10mA
VCE = 5V , IE = -10mA
600
mV
MHz
pF
Gain bandwidth product
Output capacitance
Cob
VCB = 10V , IE = 0 , f = 1.0MHz
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
BW
BV
BU
200 400
90 180
135 270
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