2SD1618 [TYSEMI]
Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity,; 低集电极 - 发射极饱和电压。非常小的尺寸使其易于提供高密度，
| 型号： | 2SD1618 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, |
| 文件： | 总2页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
2SD1618
Features
Low collector-to-emitter saturation voltage.
Very small size making it easy to provide highdensity,
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
20
15
V
5
0.7
V
Collector current
A
Collector current (pulse)
ICP
1.5
A
PC
500
mW
W
Collector dissipation
PC *
Tj
1.3
Jumction temperature
Storage temperature
150
Tstg
-55 to +150
* Mounted on ceramic board (250mm2X0.8mm)
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
Transistors
Product specification
2SD1618
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
VCB = 15V , IE = 0
Min
Typ
Max
0.1
Unit
ìA
IEBO
VCB = 4V , IE = 0
0.1
ìA
VCE = 2V , IC = 50mA
VCE = 2V , IC = 500mA
VCE = 10V , IC = 50mA
IC = 5mA , IB = 0.5mA
IC = 100mA , IB = 10mA
140
60
560
DC current Gain
hFE
fT
Gain bandwidth product
Collector-emitter saturation voltage
250
10
MHz
mV
mV
V
25
80
VCE(sat)
30
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
VBE(sat) IC = 100mA , IB = 10mA
V(BR)CBO IC = 10ìA , IE = 0
0.8
1.2
20
15
5
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Cob VCB = 10V , f = 1MHz
V
8
pF
hFE Classification
DA
Marking
Rank
S
T
U
hFE
140 280
200 400
280 560
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
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