2SD2098 [TYSEMI]
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.; 低VCE （SAT） 。优良的直流电流增益特性。 NPN硅晶体管。
| 型号： | 2SD2098 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. |
| 文件： | 总1页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SD2098
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
Low VCE(sat).
Excellent DC current gain characteristics.
NPN silicon transistor.
1
2
3
+0.1
-0.1
+0.1
0.48
-0.1
+0.1
0.44
-0.1
0.53
1. Base
+0.1
3.00
-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
Unit
V
20
V
6
V
Collector current
5
A
Collector power dissipation
Junction temperature
Storage temperature
PC
0.5
150
W
Tj
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
50
20
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
V
V
ICBO
IEBO
VCB=40V
VEB=5V
0.5
0.5
1.0
390
ìA
ìA
V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
VCE(sat) IC=4 A, IB=0.1A
0.3
hFE
fT
VCE=2V, IC=0.5A
120
VCE=6V, IE= -50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
150
30
MHz
pF
Transition frequency
Cob
hFE Classification
DJ
Marking
Rank
Q
R
hFE
120 270
180 390
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