2SD2324 [TYSEMI]

Low saturation voltage. Contains a diode between colletor and emitter.; 低饱和电压。包含colletor极和发射极之间的二极管。

2SD2324


型号：	2SD2324
厂家：	TY Semiconductor Co., Ltd
描述：	Low saturation voltage. Contains a diode between colletor and emitter. 低饱和电压。包含colletor极和发射极之间的二极管。晶体二极管晶体管开关光电二极管
文件：	总1页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Product specification

2SD2324

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

3

Low saturation voltage.

Contains a diode between colletor and emitter.

Contains a bias resistor between base and emitter.

Large current capacity.

1

2

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Small-sized package facilitating the realization of

high-density, small-sized hybrid ICs.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage, With Zener diode (11 3V)

Collector-emitter voltage, With Zener diode (11 3V)

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

V

20

15

V

5

V

Collector current

0.8

2

A

Collector current (pulse)

I^CP

A

Collector dissipation

P^C

200

mW

Jumction temperature

T^j

150

Storage temperature

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

70

Typ

Max

1.0

Unit

ìA

Collector cutoff current

Ic^BO

h^FE

f^T

V^CB= 15V , I^E= 0

DC current Gain

V^CE= 2V , I^C= 0.5A

V^CE= 2V , I^C= 0.5A

V^CB= 10V , f = 1MHz

Gain bandwidth product

Output capacitance

150

15

MHz

pF

V

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)I^C= 500mA , I^B= 10mA

V^BE(sat)I^C= 500mA , I^B= 10mA

V^(BR)CBOI^C= 10ìA , I^E= 0

I^C= 10ìA , R^BE=

0.16

0.85

0.3

1.2

V

20

20

15

V

V

Collector-to-emitter breakdown voltage

I^C= 10mA , R^BE=

I^F= 0.5A

V(BR)CEO

Diode forward voltage

Base-emitter resistance

V^F

1.5

V

R^BE

1

kÙ

Marking

Marking

BN

http://www.twtysemi.com

1of 1

sales@twtysemi.com

4008-318-123

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