2SD882 [TYSEMI]
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A); 优秀的hFE线性度和高的hFE的hFE = 60 〜400 ( VCE = 2V, IC = 1 )![2SD882](http://pdffile.icpdf.com/pdf2/p00213/img/icpdf/2SD882_1206037_icpdf.jpg)
型号: | 2SD882 |
厂家: | ![]() |
描述: | Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) |
文件: | 总1页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TransistIoCrs
Product specification
2SD882
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
40
30
V
6
3
V
A
Pc
0.5
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Ic=100uA ,IE=0
Min
40
30
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC= 10 mA , IB=0
IE= 100 uA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
V
V
1
10
1
uA
uA
uA
Collector cut-off current
Emitter cut-off current
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
60
32
400
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
f T
0.5
1.5
V
V
VCE=5 V, IC=0.1mA,f = 10MHz
50
MHz
hFE Classification
Rank
hFE
R
O
P
E
60 120
100 200
160 320
200 400
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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2SD882-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
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