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元器件品牌
2SK1959
[TYSEMI]
Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX; 门可以用1.5V的低驱动导通电阻RDS （ ON） = 3.2 MAX
元器件型号：
2SK1959
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX
门可以用1.5V的低驱动导通电阻RDS （ ON） = 3.2 MAX
晶体 晶体管 开关 脉冲 栅 驱动
PDF文件：
总1页 (文件大小：95K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK1959参数
查看货源
2SK1959-AZ
Power Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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156
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0
NEC
2SK1960
Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX
Warning
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156
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12
TYSEMI
2SK1960
MOS Field Effect Transistor
Warning
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156
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50
KEXIN
2SK1960
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
Warning
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on line
156
-
100
NEC
2SK1960-AZ
3A, 16V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET
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156
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0
RENESAS
2SK1960-AZ
Power Field-Effect Transistor, 3A I(D), 16V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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156
-
0
NEC
2SK1960-T1
2SK1960-T1
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156
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1
RENESAS
2SK1960-T2-AY
2SK1960-T2-AY
Warning
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156
-
0
RENESAS
2SK1961
High-Frequency Low-Noise Amp Applications
Warning
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on line
156
-
66
SANYO
2SK1961Y3
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92
Warning
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on line
156
-
9
ETC
2SK1961Y4
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92VAR
Warning
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on line
156
-
14
ETC
2SK1961Y5
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 100MA I(D) | TO-92VAR
Warning
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on line
156
-
8
ETC
2SK1967
Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
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on line
156
-
0
PANASONIC
2SK1967H
Power Field-Effect Transistor, 40A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
PANASONIC
2SK1968
Silicon N-Channel MOS FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
63
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