2SK2112 [TYSEMI]

Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed; 低导通电阻RDS （ ON） = 1.2 MAX 。 VGS = 4.0V ， ID = 0.5A高开关速度


元器件型号：	2SK2112
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed 低导通电阻RDS （ ON） = 1.2 MAX 。 VGS = 4.0V ， ID = 0.5A高开关速度晶体开关晶体管脉冲
PDF文件：	总1页 (文件大小：114K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK2112参数

2SK2112-AZ

Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 NEC

2SK2113

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51 ETC

2SK2113YY

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET

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0 RENESAS

2SK2113YY

RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel

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0 RENESAS

2SK2113YY-TL

RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel

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1 RENESAS

2SK2113YY-TR

RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel

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0 RENESAS

2SK2113YY-UL

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET

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1 RENESAS

2SK2113YY-UR

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET

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2 RENESAS

2SK2113YY-UR

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET

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1 RENESAS

2SK2114

Silicon N-Channel MOS FET

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42 HITACHI

2SK2114

Silicon N Channel MOS FET

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44 RENESAS

43 HITACHI

2SK2116|2SK2117

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27 ETC

2SK2112 [TYSEMI]

2SK2112-AZ

2SK2113

2SK2113YY

2SK2113YY

2SK2113YY-TL

2SK2113YY-TR

2SK2113YY-UL

2SK2113YY-UR

2SK2113YY-UR

2SK2114

2SK2114

2SK2114|2SK2115

2SK2115

2SK2116

2SK2116|2SK2117