关闭背景特效

2SK2925S [TYSEMI]

Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source; 低导通电阻RDS = 0.060 （典型值）。 4V栅极驱动器可从5V电源来驱动

2SK2925S


元器件型号：	2SK2925S
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source 低导通电阻RDS = 0.060 （典型值）。 4V栅极驱动器可从5V电源来驱动晶体驱动器栅极晶体管开关脉冲栅极驱动
PDF文件：	总1页 (文件大小：75K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK2925S参数

2SK2925S-E

暂无描述

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0 RENESAS

2SK2925STL-E

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA

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0 RENESAS

2SK2926

Silicon N Channel MOS FET High Speed Power Switching

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67 HITACHI

2SK2926

Silicon N Channel MOS FET High Speed Power Switching

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88 RENESAS

2SK2926(L)

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-251VAR

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10 ETC

2SK2926(L)|2SK2926(S)

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12 ETC

2SK2926(S)

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252VAR

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21 ETC

2SK2926(S)

0.11ohm, POWER, FET, DPAK-3

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0 RENESAS

2SK2926(S)TL

15A, 60V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET

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0 RENESAS

2SK2926(S)TL

Power Field-Effect Transistor, 15A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 RENESAS

2SK2926(S)TR

Power Field-Effect Transistor, 15A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 HITACHI

2SK2926(S)TR

15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET

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0 RENESAS

2SK2926(S)TR

Power Field-Effect Transistor, 15A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 RENESAS

2SK2926L

Silicon N Channel MOS FET High Speed Power Switching

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38 HITACHI

2SK2926L

Silicon N Channel MOS FET High Speed Power Switching

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18 RENESAS

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