关闭背景特效

2SK3269 [TYSEMI]

4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A); 4.5 V可驱动低通态电阻RDS（on ） 1 = 12 m最大。（ VGS = 10V ， ID = 18 A）

2SK3269


元器件型号：	2SK3269
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A) 4.5 V可驱动低通态电阻RDS（on ） 1 = 12 m最大。（ VGS = 10V ， ID = 18 A）晶体晶体管开关脉冲驱动
PDF文件：	总1页 (文件大小：84K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK3269参数

2SK3270-01

N-channel MOS-FET

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48 FUJI

2SK3270-01MR

TRENCH MOSFET

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21 ETC

2SK3271-01

N-channel MOS-FET

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301 FUJI

2SK3271-01L

Transistor

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0 FUJI

2SK3271-01S

Transistor

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0 FUJI

2SK3272-01L

N-channel MOS-FET

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138 FUJI

2SK3272-01S

N-channel MOS-FET

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74 FUJI

2SK3272-01SJ

TRENCH MOSFET

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28 ETC

2SK3273-01MR

N-channel MOS-FET

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96 FUJI

2SK3274

Slilicon N Channel MOS FET High Speed Power Switching

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12 RENESAS

2SK3274

Slilicon N Channel MOS FET High Speed Power Switching

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28 RENESAS

2SK3274(L)

30A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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0 RENESAS

2SK3274(L)|2SK3274(S)

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18 ETC

2SK3274(S)

30A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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0 RENESAS

2SK3274L

Slilicon N Channel MOS FET High Speed Power Switching

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25 RENESAS

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