关闭背景特效

2SK3511 [TYSEMI]

Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode; 超低通态电阻： RDS （ ON）为12.5 m最大内置栅极保护二极管

2SK3511


元器件型号：	2SK3511
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode 超低通态电阻： RDS （ ON）为12.5 m最大内置栅极保护二极管晶体栅极二极管晶体管开关脉冲局域网
PDF文件：	总1页 (文件大小：120K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK3511参数

2SK3511-AZ

暂无描述

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0 NEC

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

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25 NEC

2SK3511-S-AZ

83A, 75V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

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0 RENESAS

2SK3511-Z

SWITCHING N-CHANNEL POWER MOSFET

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33 NEC

2SK3511-Z-AZ

Power Field-Effect Transistor, 83A I(D), 75V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN

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0 NEC

2SK3511-Z-AZ

83A, 75V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN

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0 RENESAS

2SK3511-Z-AZ

Power Field-Effect Transistor, 83A I(D), 75V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN

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0 NEC

2SK3511-Z-E2-AZ

TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,83A I(D),TO-263ABVAR

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0 RENESAS

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

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27 NEC

2SK3511-ZJ-AZ

Power Field-Effect Transistor, 83A I(D), 75V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN

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0 NEC

2SK3512

N-CHANNEL SILICON POWER MOSFET

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21 FUJI

2SK3512

N-CHANNEL SILICON POWER MOSFET

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12 FUJI

2SK3512-01L

N-CHANNEL SILICON POWER MOSFET

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13 FUJI

2SK3512-01L

N-CHANNEL SILICON POWER MOSFET

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39 FUJI

2SK3512-01S

MOSFETs

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27 FUJI

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