关闭背景特效

2SK3634 [TYSEMI]

High voltage: VDSS = 200 V Gate voltage rating: 30 V Built-in gate protection diode; 高电压VDSS = 200 V栅电压额定值： 30 V内置栅极保护二极管

2SK3634


元器件型号：	2SK3634
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	High voltage: VDSS = 200 V Gate voltage rating: 30 V Built-in gate protection diode 高电压VDSS = 200 V栅电压额定值： 30 V内置栅极保护二极管晶体栅极二极管晶体管开关
PDF文件：	总1页 (文件大小：113K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK3634参数

2SK3634-AZ

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

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0 NEC

2SK3634-AZ

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

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0 NEC

2SK3634-Z

SWITCHING N-CHANNEL POWER MOSFET

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30 NEC

2SK3634-Z

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

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0 NEC

2SK3634-Z

6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252, TO-252, 3 PIN

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0 RENESAS

2SK3635

SWITCHING N-CHANNEL POWER MOSFET

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36 NEC

2SK3635

MOS Field Effect Transistor

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18 KEXIN

2SK3635

High voltage: VDSS = 200 V Gate voltage rating: -30 V Built-in gate protection diode

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13 TYSEMI

2SK3635-AZ

暂无描述

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0 NEC

2SK3635-Z

SWITCHING N-CHANNEL POWER MOSFET

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33 NEC

2SK3636

Silicon N-channel Power MOSFET

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18 KEXIN

2SK3636

Avalanche energy capacity guaranteed: EAS 20 mJ High-speed switching: tf = 50 ns

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11 TYSEMI

2SK3637

Low on-resistance, low Qg High avalanche resistance

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13 TYSEMI

2SK3637

Silicon N-channel Power MOSFET

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35 KEXIN

2SK3637

Silicon N-channel power MOSFET

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46 PANASONIC

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