BAS70W [TYSEMI]
Low forward voltage High breakdown voltage Guard ring protected Low capacitance.; 低正向电压高击穿电压保护环保护的低电容。
| 型号： | BAS70W |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low forward voltage High breakdown voltage Guard ring protected Low capacitance. |
| 文件： | 总1页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAS70W;BAS70-04W
BAS70-05W;BAS70-06W
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Symbol
VR
Conditions
Min
Max
70
Unit
V
IF
70
mA
mA
mA
IFRM
IFSM
Tstg
Tj
70
tp
1 s; ä
0.5
100
+150
150
+150
625
tp
10 ms
-65
-65
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Tamb
Rth j-a
Note 1
K/W
Electrical Characteristics Ta = 25
Param eter
Sym bol
Condition
IF = 1 m A
Max
Unit
m V
m V
V
410
750
1
Forward Voltage
Reverse Current
VF
IF = 10 m A
IF = 15 m A
VR = 50 V; note 1
VR = 70 V; note 1
IF = 5 m A
100
10
nA
A
IR
Charge carrier life tim e (Krakauer m ethod)
Diode capacitance
100
2
ps
Cd
f = 1 MHz; VR = 0
pF
Note
1. Pulse test: tp = 300 m s; d = 0.02.
Marking
Type
BAS70W
73*
BAS70-04W
74*
BAS70-05W
75*
BAS70-06W
76*
Marking
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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