BC847CW [TYSEMI]

Low current (max. 100 mA). Low voltage (max. 65 V).Collector-base voltage VCBO 80 50 30 V; 低电流(最大100 mA时) 。低电压(最大65 V ) .Collector - 基极电压VCBO 80 50 30 V
BC847CW
型号: BC847CW
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low current (max. 100 mA). Low voltage (max. 65 V).Collector-base voltage VCBO 80 50 30 V
低电流(最大100 mA时) 。低电压(最大65 V ) .Collector - 基极电压VCBO 80 50 30 V

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TransistIoCrs  
Product specification  
BC846W,BC847W,BC848W  
Features  
Low current (max. 100 mA).  
Low voltage (max. 65 V).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC846W BC847W BC848W  
Unit  
V
80  
65  
6
50  
45  
30  
30  
5
Collector-emitter voltage  
Emitter-base voltage  
V
6
V
100  
Collector current  
mA  
mA  
mA  
mW  
200  
Peak collector current  
ICM  
200  
Peak base current  
IBM  
200  
Total power dissipation  
Junction temperature  
Ptot  
150  
Tj  
-65 to +150  
-65 to +150  
625  
Storage temperature  
Tstg  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Ramb  
Rth j-a  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
TransistIoCrs  
Product specification  
BC846W,BC847W,BC848W  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
VCB = 30 V; IE = 0  
Min  
Typ  
Max  
15  
Unit  
nA  
Collector cutoff current  
ICBO  
5
ìA  
nA  
VCB = 30 V; IE = 0;Tj = 150  
VEB = 5 V; IC = 0  
Emitter cutoff current  
BC846W  
IEBO  
100  
450  
800  
220  
450  
800  
250  
600  
110  
110  
110  
200  
420  
BC847W,BC848W  
DC current gain  
hFE  
IC = 2 mA; VCE = 5 V  
BC846AW,BC847AW  
BC846BW,BC847BW  
BC847CW  
180  
290  
520  
90  
IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA; *  
IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA;*  
IC = 2 mA; VCE = 5 V  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(sat)  
VBE  
200  
700  
900  
660  
580  
100  
700  
770  
3
IC = 10 mA; VCE = 5 V  
Collector capacitance  
Transition frequency  
CC  
fT  
VCB = 10 V; IE = Ie = 0;f = 1 MHz  
VCE = 5 V; IC = 10 mA;f = 100 MHz  
MHz  
IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f =  
1 kHz;B = 200 Hz  
Noise figure  
NF  
10  
dB  
* Pulse test: tp  
300µs, ä  
0.02.  
hFE Classification  
TYPE  
BC846W  
BC846AW  
BC846BW  
Marking  
1D  
1A  
1B  
TYPE  
BC847W  
1H  
BC847AW  
1E  
BC847BW  
1F  
BC847CW  
1G  
Marking  
TYPE  
BC848W  
1M  
Marking  
4008-318-123  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  

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