BCP56-16 [TYSEMI]
For AF driver and output stages High collector current Low collector-emitter saturation voltage; 对于自动对焦驱动器和输出级高集电极电流低集电极 - 发射极饱和电压
| 型号： | BCP56-16 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | For AF driver and output stages High collector current Low collector-emitter saturation voltage |
| 文件： | 总3页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BCP56-16
SOT-223
Unit: mm
■ Features
+0.2
+0.2
3.50-0.2
6.50-0.2
● For AF driver and output stages
● High collector current
+0.2
0.90-0.2
+0.1
3.00-0.1
● Low collector-emitter saturation voltage
+0.3
7.00-0.3
1 base
1
2
3
+0.1
0.70-0.1
2.9
2 collector
3 emitter
4.6
■ Absolute Maximum Ratings Ta = 25℃
Parameter
collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
100
collector-emitter voltage
emitter-base voltage
80
V
5
V
collector current (DC)
1
1.5
A
peak collector current (tP < 5ms)
power dissipation
ICM
A
PD
1.5
W
thermal resistance from junction to ambient
junction temperature
RθJA
Tj
94
℃/W
℃
℃
150
Tstg
storage temperature
-65 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector cut-off current
Symbol
Testconditons
Min
100
80
Typ Max
Unit
V(BR)CBO IC= 0.1mA,IE=0
V(BR)CEO IC= 10mA,IB=0
V(BR)EBO IC= 10μA,IE=0
5
ICBO
IEBO
IE = 0 A; VCB = 30 V
IC = 0 A; VEB = 5 V
100
100
nA
nA
Emitter cut-off current
IC = 5 mA; VCE = 2 V
IC =150 mA; VCE = 2 V
IC = 500 mA; VCE = 2 V
25
100
25
DC current gain
hFE
250
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 500mA; IB = 50 mA
fT IC = 10 mA; VCE = 5 V; f = 100 MHz
0.5
V
130
MHz
■ Marking
Marking
BCP 56
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Product specification
BCP56-16
Typical Characteristics
1800
mA
103
MHz
5
f T
1500
1350
1200
1050
900
750
600
450
300
150
0
102
5
101
100
5
101
5
102
mA
103
°C
0
15 30 45 60 75 90 105 120
150
V
=01V
T
EC
S
ΙC
Total power dissipation
P
tot
=
f
(T
S
)
Transition frequency f = f (I )
T C
103
5
104
nA
h FE
Ι CBO
max
103
100
25
C
C
102
5
-50
C
102
101
typ
101
5
100
10-1
100
0
50
100
C
150
100
101
10 2
10 3 mA 10 4
V
=03V
V
=2V
Ι C
BC
TA
CE
DC current gain
h
FE
=
f
(
I
)
Collector cutoff current
I = f (T )
CBO A
C
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Product specification
BCP56-16
104
104
mA
Ι C
mA
103
Ι C
103
102
101
100
100
25
-50
C
C
C
100 C
25 C
-50 C
102
101
100
0
0.2
0.4
0.6
V
0.8
0
0.2
0.4
0.6
0.8
V
1.2
I
=
f
(
V
,)
h
=01
I
=
f
(
V
,)
h
=01
EF
BEast
CEast
VCEsat
VBEsat
C
EF
C
Base-emitter saturation voltage
Collector-emitter saturation voltage
5
Ptotmax
PtotDC
t p
t p
T
D
=
T
102
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
10-6 10-5
10-4 10-3
10-2
s
100
t p
P
/
P
= f ( t )
p
ttoamx
ttoCD
Permissible pulse load
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相关型号：
BCP56-16E6433
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
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