BCX70G [TYSEMI]

Low current (max. 100 mA). Low voltage (max. 45 V).Collector-base voltage VCBO 45 V; 低电流(最大100 mA时) 。低电压(最大45 V ) .Collector - 基极电压VCBO 45 V
BCX70G
型号: BCX70G
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low current (max. 100 mA). Low voltage (max. 45 V).Collector-base voltage VCBO 45 V
低电流(最大100 mA时) 。低电压(最大45 V ) .Collector - 基极电压VCBO 45 V

晶体 晶体管 光电二极管
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TransistIoCrs  
Product specification  
BCX70 series  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Low current (max. 100 mA).  
Low voltage (max. 45 V).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
45  
45  
Collector-emitter voltage  
Emitter-base voltage  
V
5
V
Collector current  
100  
mA  
mA  
mA  
mW  
Peak collector current  
ICM  
200  
Peak base current  
IBM  
200  
Collector dissipation  
PC  
250  
Junction temperature  
Tj  
150  
Storage temperature  
Tstg  
-65 to +150  
-65 to +150  
500  
Operating ambient temperature  
Thermal resistance from junction to ambient *  
* Transistor mounted on an FR4 printed-circuit board.  
Tamb  
Rth(j-a)  
K/W  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
TransistIoCrs  
Product specification  
BCX70 series  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = 45 V  
Min  
Typ  
Max  
20  
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
ICBO  
20  
ìA  
nA  
IE = 0; VCB = 45 V; Tj = 150  
IC = 0; VEB = 4 V  
IEBO  
20  
BCX70G  
BCX70H  
BCX70J  
BCX70K  
BCX70G  
BCX70H  
BCX70J  
BCX70K  
BCX70G  
BCX70H  
BCX70J  
BCX70K  
40  
30  
hFE  
IC = 10 ìA; VCE = 5 V  
100  
120  
180  
250  
380  
50  
220  
310  
460  
630  
DC current gain  
DC current gain  
hFE  
IC = 2 mA; VCE = 5 V  
70  
hFE  
IC = 50 mA; VCE = 1 V  
90  
100  
50  
IC = 10 mA; IB =0.25 mA  
350  
550  
mV  
mV  
mV  
mV  
mV  
pF  
Collector-emitter saturation voltage  
Base to emitter saturation voltage  
VCE(sat)  
IC = 50mA; IB = 1.25 mA  
100  
600  
700  
550  
IC = 10 mA; IB =0.25 mA  
850  
VBE(sat)  
IC = 50mA; IB = 1.25 mA  
1050  
750  
Base to emitter voltage  
Collector capacitance  
Emitter capacitance  
VBE  
CC  
Ce  
fT  
IC = 2 mA; VCE = 5 V  
650  
1.7  
11  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = 10 mA; VCE = 5 V; f = 100 MHz  
pF  
Transition frequency  
Noise figure  
*
100  
250  
MHz  
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ;  
f = 1 kHz; B = 200 Hz  
NF  
2
6
dB  
* Pulse test: tp  
300 ìs; d  
0.02.  
hFE Classification  
Type Number  
Marking  
BCX70G  
AG  
BCX70H  
AH  
BCX70J  
AJ  
BCX70K  
AK  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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