BF550 [TYSEMI]
Low current (max. 25 mA). Low voltage (max. 40 V).Collector current IC -25 mA; 低电流(最大25 mA)的。低电压(最大40 V) .Collector电流IC -25毫安型号: | BF550 |
厂家: | TY Semiconductor Co., Ltd |
描述: | Low current (max. 25 mA). Low voltage (max. 40 V).Collector current IC -25 mA |
文件: | 总1页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
BF550
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Low current (max. 25 mA).
Low voltage (max. 40 V).
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-40
V
-4
V
-25
mA
mA
mW
Peak collector current
ICM
-25
Total power dissipation
Storage temperature
Junction temperature
*
Ptot
250
Tstg
-65 to +150
150
Tj
Operating ambient temperature
Ramb
Rth j-a
-65 to +150
500
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
K/W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
IEBO
hFE
Testconditons
Min
Typ
Max
-50
Unit
IE = 0; VcB = -30 V
nA
nA
Ic = 0; VEB = -3 V
-100
Ic = -1 mA; VcE = -10 V
Ic = -1 mA; VcE = -10 V
Ic = -1 mA; VcB = -10 V; f = 1 MHz
IC = -1 mA; VCE = -10 V; f = 100 MHz
50
Base to emitter voltage
Feedback capacitance
Transition frequency
VBE
Cre
750
0.5
mV
pF
fT
325
MHz
Marking
Marking
LA
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