BSR20A [TYSEMI]

Low current (max. 300 mA) High voltage (max. 150 V).Emitter-base voltage VEBO -5 V; 低电流(最大300 mA)的高电压(最大150V) .Emitter - 基极电压VEBO -5 V
BSR20A
型号: BSR20A
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Low current (max. 300 mA) High voltage (max. 150 V).Emitter-base voltage VEBO -5 V
低电流(最大300 mA)的高电压(最大150V) .Emitter - 基极电压VEBO -5 V

文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transistors  
Product specification  
BSR20,BSR20A  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low current (max. 300 mA)  
High voltage (max. 150 V).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
-130  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
BSR20  
BSR20A  
BSR20  
-160  
V
-120  
V
VCEO  
BSR20A  
-150  
V
Emitter-base voltage  
Collector current  
VEBO  
IC  
-5  
V
-300  
mA  
mA  
mA  
mW  
Peak collector current  
Base current  
ICM  
IB  
-600  
-100  
Total power dissipation *  
Storage temperature  
Junction temperature  
Operating ambient temperature  
Ptot  
Tstg  
Tj  
250  
-65 to +150  
150  
Ramb  
Rth j-a  
-65 to +150  
500  
Thermal resistance from junction to ambient *  
K/W  
* Transistor mounted on an FR4 printed-circuit board.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Transistors  
Product specification  
BSR20,BSR20A  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = -100 V  
Min  
Typ  
Max  
-100  
-100  
-50  
Unit  
nA  
ìA  
nA  
ìA  
nA  
Collector cutoff current  
Collector cutoff current  
BSR20  
IE = 0; VCB = -100 V; Tamb = 100  
IE = 0; VCB = -120 V  
BSR20A  
ICBO  
IEBO  
hFE  
-50  
IE = 0; VCB = -120 V; Tamb = 100  
IC = 0; VEB = -4 V  
Emitter cutoff current  
DC current gain  
-50  
BSR20  
BSR20A  
BSR20  
30  
50  
40  
60  
40  
50  
IC = -1 mA; VCE = -5 V  
IC = -10 mA; VCE = -5 V  
IC = -50 mA; VCE = -5 V  
DC current gain  
DC current gain  
180  
240  
hFE  
BSR20A  
BSR20  
hFE  
BSR20A  
IC = -10 mA; IB = -1 mA  
-200  
-500  
6
mV  
mV  
base-emitter saturation voltage  
VCEsat  
IC = -50 mA; IB = -5 mA  
Collector capacitance  
Transition frequency  
Cc  
fT  
IE = ie = 0; VCB = -10 V; f = 1 MHz  
pF  
BSR20  
100  
100  
400  
300  
MHz  
MHz  
IC = -10 mA; VCE = -10 V; f = 100 MHz  
BSR20A  
hFE Classification  
TYPE  
BSR20  
T35  
BSR20A  
T36  
Marking  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

相关型号:

BSR20A-T

TRANSISTOR 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
NXP

BSR20A-TAPE-13

TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR20A-TAPE-7

TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR20A/T3

TRANSISTOR 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP

BSR20AT/R

TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 600MA I(C) | SOT-23
ETC

BSR20ATRL

TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR20ATRL13

TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR20T/R

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 600MA I(C) | SOT-23
ETC

BSR20TRL

TRANSISTOR 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR20TRL13

Small Signal Bipolar Transistor, 0.6A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
YAGEO

BSR20TRL13

TRANSISTOR 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BSR21R11A

CIT SWITCH
CIT