BZT55C6V8 [TYSEMI]
500mW Power Dissipation Low reverse current level Very high stability Low noise; 500mW的功耗低反向电流水平非常高的稳定性低噪音
| 型号： | BZT55C6V8 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 500mW Power Dissipation Low reverse current level Very high stability Low noise |
| 文件： | 总3页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BZT55C6V8
■ Features
LL-34
Unit: mm
● 500mW Power Dissipation
● Low reverse current level
● Very high stability
2.64REF
0.50
0.35
1.50
1.30
● Low noise
● Ideal for Surface Mountted Application
3.60
3.30
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Power Dissipation
Symbol
PD
Rating
500
Unit
mW
V
(Note 1)
(Note 1)
Forward Voltage @ IF = 200mA
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
VF
1.5
RθJA
Tj, TSTG
300
℃/W
℃
-65 to +175
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
■ Electrical Characteristics Ta = 25℃
Zener Voltage Range
(Note 2)
Maximum Zener
Impedance
Maximum Reverse
Current
Type
VZ @ IZT
IR
@
VR
IZT
ZZT @ IZT
ZZK @ IZK
IZK
Nom (V) Min (V) Max (V)
mA
5
mA
1
V
3
μA
Ω
Ω
BZT55C6V8
6.8
6.4
7.2
8
150
0.1
Notes: 2. Tested with pulses, Tp ≤100ms.
http://www.twtysemi.com
1 of 3
sales@twtysemi.com
4008-318-123
Product specification
BZT55C6V8
Typical Characteristics
600
500
400
300
200
100
0
1.3
1.2
1.1
V
=V /V (25°C)
Zt Z
Ztn
–4
TK =10 10 /K
VZ
–4
8
6
10 /K
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
200
240
0
40
80
120
160
–60
0
60
120
180
T
amb
– Ambient Temperature ( °C )
T – Junction Temperature ( °C )
j
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Typical Change of Working Voltage vs.
Junction Temperature
1000
100
10
15
10
5
T =25°C
j
I =5mA
Z
I =5mA
Z
0
1
–5
25
50
0
5
10
15
20
0
10
20
30
40
V
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
Z
Figure 3. Typical Change of Working Voltage under Oper-
ating Conditions at T =25 C
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
amb
200
150
V =2V
R
T =25°C
j
100
50
0
25
0
5
10
15
20
V
– Z-Voltage ( V )
Z
Figure 5. Diode Capacitance vs. Z–Voltage
http://www.twtysemi.com
2 of 3
sales@twtysemi.com
4008-318-123
Product specification
BZT55C6V8
100
10
1
50
40
30
P
T
=500mW
D
=25°C
amb
T =25°C
j
0.1
0.01
20
10
0
0.001
1.0
35
0
0.2
0.4
0.6
0.8
15
20
25
V – Z-Voltage ( V )
Z
30
V – Forward Voltage ( V )
F
Figure 6. Forward Current vs. Forward Voltage
Figure 7. Z–Current vs. Z–Voltage
100
1000
100
10
80
I =1mA
Z
P
T
=500mW
D
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
V
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
Z
Figure 8. Z–Current vs. Z–Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
p
Figure 10. Thermal Response
http://www.twtysemi.com
3 of 3
sales@twtysemi.com
4008-318-123
相关型号：
BZT55C6V8-7
Zener Diode, 6.8V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2
DIODES
BZT55C6V813
Zener Diode, 6.8V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2
DIODES
©2020 ICPDF网 联系我们和版权申明