BZV55-F2V4 [TYSEMI]
Silicon Planar Power Zener Diodes; 硅平面功率齐纳二极管
| 型号： | BZV55-F2V4 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Silicon Planar Power Zener Diodes |
| 文件： | 总7页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS
Product specification
BZV55 series
DATA SHEET
Voltage regulator diodes
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Product specification
Voltage regulator diodes
BZV55 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
k
a
columns
APPLICATIONS
MAM215
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24 ±2% (BZV55-B) and
approx. ±5% (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2 A
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Ptot
total power dissipation
T
amb ≤ 50 °C; note 1
−
−
−
400
500
40
mW
tie-point ≤ 50 °C; note 1
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
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Product specification
Voltage regulator diodes
BZV55 series
ELECTRICAL CHARACTERISTICS
Total BZV55-B and BZV55-C series
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IF = 10 mA; see Fig.4
MAX.
UNIT
VF
IR
forward voltage
reverse current
0.9
V
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
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Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
DIODE CAP.
Cd (pF)
NON-REPETITIVE PEAK
REVERSE CURRENT
rdif (Ω)
at IZtest = 5 mA
at IZtest = 5 mA
(see Figs 5 and 6)
at f = 1 MHz;
VR = 0 V
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
BZV55-
Bxxx
Cxxx
Tol. approx.
Tol. ±2% (B)
at IZtest = 1 mA at IZtest = 5 mA
±5% (C)
MIN. MAX. MIN. MAX.
TYP.
275
MAX.
600
TYP.
70
MAX. MIN.
TYP. MAX.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.9
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
0
3.2
0
3.5
0
3.8
0
4.1
0
4.6
0
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.4
6.0
6.6
40
2.3
7.2
30
6
1.2
3.0
7.9
30
80
6
2.5
4.0
8.7
40
80
6
3.2
4.6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
15.6
17.6
19.6
75
16
50
10.4
12.4
12.3
14.1
15.9
75
18
50
70
20
60
60
22
60
60
24
60
55
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Product specification
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BZV55 series
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Table 2 Per type, BZV55-B/C27 to BZV55-B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
DIODE CAP.
Cd (pF)
NON-REPETITIVE PEAK
REVERSE CURRENT
rdif (Ω)
at IZtest = 2 mA
at IZtest = 2 mA
(see Figs 5 and 6)
at f = 1 MHz;
VR = 0 V
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
BZV55-
Bxxx
Cxxx
Tol. approx.
Tol. ±2% (B)
at IZtest = 0.5 mA at IZtest = 2 mA
±5% (C)
MIN. MAX. MIN. MAX.
TYP.
65
MAX.
300
TYP.
25
MAX. MIN.
TYP. MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
80
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
70
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
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Product specification
Voltage regulator diodes
BZV55 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient see Fig.2 and note 1
380
Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ =
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
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Product specification
Voltage regulator diodes
BZV55 series
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
10
100
(2)
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.4 Typical forward current as a function of
forward voltage.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
0
3V3
4V7
3V0
2V4
2V7
−3
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZV55-B/C4V7 to BZV55-B/C12.
BZV55-B/C2V4 to BZV55-B/C4V3.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
working current; typical values.
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