BZX84C11W [TYSEMI]
Planar Die Construction, 200mW Power Dissipation; 平面片建设， 200mW的功率耗散
| 型号： | BZX84C11W |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Planar Die Construction, 200mW Power Dissipation |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BZX84C11W
Features
Planar Die Construction
200mW Power Dissipation
Ultra-Small Surface Mount Package
Absolute Maximum Ratings Ta = 25
Parameter
Forward Voltage @ IF = 10mA
Symbol
VF
Rating
0.9
Unit
V
Power Dissipation
PD
200
mW
K/W
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
R
JA
625
Tj, TSTG
-65 to +150
Electrical Characteristics @ TA = 25 C unless otherwise specified
Maximum
Temperature
Coefficient of
Zener Voltage
@ IZT = 5mA
(mV/ C)
Zener Voltage
Range *1
Maximum Zener Impedance*2
Reverse Current
*1
Type
Number
VZ @ IZT
IZT
ZZT @ IZT ZZK @ IZK
IZK
IR
@VR
Nom (V) Min (V)
11 10.4
Max (V)
11.6
mA
5
mA
1
V
8
Min
5.4
Max
9
A
BZX84C11W
20
150
0.1
*1. Short duration test pulse used to minimize self-heating effect.
*2. f = 1KHz.
Marking
Marking
KP1
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Product specification
BZX84C11W
300
200
50
40
T = 25°C
j
C3V9
C5V6
C2V7
C3V3
C6V8
C4V7
C8V2
30
20
100
Test Current IZ
5.0mA
10
0
0
100
0
200
0
1
2
3
4
5
6
8
9
10
7
VZ, ZENER VOLTAGE (V)
TA, AMBIENT TEMPERATURE, (°C)
Fig. 1. Power Derating Curve
Fig. 2 Zener Breakdown Characteristics
1000
30
Tj = 25°C
C10
C12
Tj = 25 °C
VR = 1V
VR = 2V
C15
20
10
0
100
C18
VR = 1V
C22
C27
VR = 2V
Test current IZ
5mA
C33
C36 C39
10
10
1
100
VZ, NOMINAL ZENER VOLTAGE (V)
0
10
VZ, ZENER VOLTAGE (V)
Fig. 3. Zener Breakdown Characteristics
20
30
40
Fig. 4. Total Capacitance vs Nominal Zener Voltage
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