DAN212K [TYSEMI]
Fast Switching Speed, For General Purpose Switching Applications; 快速开关速度,对于通用开关应用型号: | DAN212K |
厂家: | TY Semiconductor Co., Ltd |
描述: | Fast Switching Speed, For General Purpose Switching Applications |
文件: | 总3页 (文件大小:304K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product specification
DAN212K
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
●Fast Switching Speed
●For General Purpose Switching Applications
●High Conductance
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRM
Rating
100
Unit
V
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
IO
53
200
V
Average Rectified Output Current
Forward Continuous Current
mA
mA
IFM
300
2.0
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
A
1.0
Power Dissipation
Pd
225
mW
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
RθJA
T,TSTG
556
/W
℃
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
75
Typ Max Unit
Reverse Breakdown Voltage
V(BR)R
V
IR=100μA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
0.715
0.855
V
Forward Voltage
Leakage Current
VF
1.0
1.25
1.0
25
μA
IR
VR = 20V
nA
Junction Capacitance
Cj
trr
VR = 0, f = 1.0MHz
IF = IR = 10mA,Irr = 0.1 X IR, RL = 100 Ω
2
4
pF
ns
Reverse Recovery Time
Marking
Marking
A6
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Product specification
DAN212K
■ Typical Characteristics
150
Ta= 25°C
300
250
200
150
100
50
Ta= 25°C
140
130
120
0
10
20
30
50
70
100
110
Reverse Voltage, VR [v]
1
2
3
5
10
20 30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
485
725
Ta= 25°C
Ta= 25°C
450
700
650
600
550
500
400
350
300
250
F
225
450
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.5
Ta= 25°C
1.4
1.3
Ta= 25°C
1.2
1
1.2
1.1
1
0.8
F
0.6
10
20 30
50
100
200 300 500
15
14
0
2
4
6
8
10
12
Forward Current, IF [mA]
Reverse Voltage [V]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance
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Product specification
DAN212K
4
3.5
3
4 00
Ta= 25°C
3 00
2 00
I
F (
2.5
2
-
A
V )
A V E
R A G
E
R E
C T
I
F
I
E
D
C U R R E
1 00
N T
-
1.5
1
m
A
D
0
0
5 0
1 00
1 50
10
20
30
40
50
60
Ambient Temperature, TA [ oC]
Reverse Current [mA]
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
Figure 7. Reverse Recovery Time
vs Reverse Current
Figure 8. Average Rectified Current (IF(AV)
)
versus Ambient Temperature (T
A)
TRR - IR 10 mA vs 60 mA
500
400
300
200
100
0
0
50
100
150
200
Average Temperature, IO (oC)
Figrue 9. Power Derating Curve
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