DAN212K [TYSEMI]

Fast Switching Speed, For General Purpose Switching Applications; 快速开关速度,对于通用开关应用
DAN212K
型号: DAN212K
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Fast Switching Speed, For General Purpose Switching Applications
快速开关速度,对于通用开关应用

开关 通用开关
文件: 总3页 (文件大小:304K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Product specification  
DAN212K  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Fast Switching Speed  
For General Purpose Switching Applications  
High Conductance  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
VRM  
Rating  
100  
Unit  
V
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
53  
200  
V
Average Rectified Output Current  
Forward Continuous Current  
mA  
mA  
IFM  
300  
2.0  
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs  
@ t = 1.0s  
IFSM  
A
1.0  
Power Dissipation  
Pd  
225  
mW  
Thermal Resistance Junction to Ambient Air  
Operating and Storage Temperature Range  
RθJA  
T,TSTG  
556  
/W  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
75  
Typ Max Unit  
Reverse Breakdown Voltage  
V(BR)R  
V
IR=100μA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
VR = 75V  
0.715  
0.855  
V
Forward Voltage  
Leakage Current  
VF  
1.0  
1.25  
1.0  
25  
μA  
IR  
VR = 20V  
nA  
Junction Capacitance  
Cj  
trr  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,Irr = 0.1 X IR, RL = 100 Ω  
2
4
pF  
ns  
Reverse Recovery Time  
Marking  
Marking  
A6  
http://www.twtysemi.com  
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sales@twtysemi.com  
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Product specification  
DAN212K  
Typical Characteristics  
150  
Ta= 25°C  
300  
250  
200  
150  
100  
50  
Ta= 25°C  
140  
130  
120  
0
10  
20  
30  
50  
70  
100  
110  
Reverse Voltage, VR [v]  
1
2
3
5
10  
20 30  
50  
100  
GENERAL RULE: The Reverse Current of a diode will approximately  
double for every ten (10) Degree C increase in Temperature  
Reverse Current, IR [uA]  
Figure 1. Reverse Voltage vs Reverse Current  
BV - 1.0 to 100 uA  
Figure 2. Reverse Current vs Reverse Voltage  
IR - 10 to 100 V  
485  
725  
Ta= 25°C  
Ta= 25°C  
450  
700  
650  
600  
550  
500  
400  
350  
300  
250  
F
225  
450  
1
2
3
5
10  
20 30  
50  
100  
0.1  
0.2 0.3 0.5  
1
2
3
5
10  
Forward Current, IF [uA]  
Forward Current, IF [mA]  
Figure 3. Forward Voltage vs Forward Current  
VF - 1.0 to 100 uA  
Figure 4. Forward Voltage vs Forward Current  
VF - 0.1 to 10 mA  
1.5  
Ta= 25°C  
1.4  
1.3  
Ta= 25°C  
1.2  
1
1.2  
1.1  
1
0.8  
F
0.6  
10  
20 30  
50  
100  
200 300 500  
15  
14  
0
2
4
6
8
10  
12  
Forward Current, IF [mA]  
Reverse Voltage [V]  
Figure 5. Forward Voltage vs Forward Current  
VF - 10 - 800 mA  
Figure 6. Total Capacitance  
http://www.twtysemi.com  
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sales@twtysemi.com  
4008-318-123  
Product specification  
DAN212K  
4
3.5  
3
4 00  
Ta= 25°C  
3 00  
2 00  
I
F (  
2.5  
2
-
A
V )  
A V E  
R A G  
E
R E  
C T  
I
F
I
E
D
C U R R E  
1 00  
N T  
-
1.5  
1
m
A
D
0
0
5 0  
1 00  
1 50  
10  
20  
30  
40  
50  
60  
Ambient Temperature, TA [ oC]  
Reverse Current [mA]  
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms  
Figure 7. Reverse Recovery Time  
vs Reverse Current  
Figure 8. Average Rectified Current (IF(AV)  
)
versus Ambient Temperature (T  
A)  
TRR - IR 10 mA vs 60 mA  
500  
400  
300  
200  
100  
0
0
50  
100  
150  
200  
Average Temperature, IO (oC)  
Figrue 9. Power Derating Curve  
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