DF08S [TYSEMI]
Glass passivated chip junctions, Surge Overload Rating to 50A Peak; 玻璃钝化芯片路口，浪涌过载额定值为50A峰值
| 型号： | DF08S |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Glass passivated chip junctions, Surge Overload Rating to 50A Peak |
| 文件： | 总2页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DF005S - DF10S
DF-S
0.205 (5.2)
0.195 (5.0)
■ Features
0.047 (1.20)
0.040 (1.02)
● Glass passivated chip junctions
● Low Forward Voltage Drop, High Current Capability
● Surge Overload Rating to 50A Peak
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
45o
0.320 (8.13)
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.130 (3.3)
0.009 (0.241)
0.120 (3.05)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol DF005S DF01S DF02S DF04S DF06S DF08S DF10S Unit
VRMM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VDC
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VRMS
IO
35
70
140
280
1.0
420
560
700
V
A
Average Forward Rectified Current TA=@ 40℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single half-sine-wave Superimposed on Rated Load
(JEDECmethod)
50
IFSM
A
1.1
Forward Voltage (per element) @ IF = 1.0A
VF
IR
V
10
500
Reverse Current(per element) @ Rated VR ,
TA = 25℃
TA = 125℃
μA
I2t
CJ
A2s
pF
10
25
Rating for fusing (t < 8.3ms)
Typical Total Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
40
RθJA
Tj, Tstg
℃/W
℃
-55 to +150
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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Product specification
DF005S - DF10S
Typical Characteristics
1.0
10
60 Hz Resistive or
Inductive load
1.0
0.5
0.1
0.01
0
40
60
100
120
140
0.4
0.8
1.0
1.2
1.4
80
0.6
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
50
100
Tj = 25°C
Single half-sine-Wave
f = 1.0 Mhz
= 50 mV p-p
V
sig
40
30
10
20
10
0
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance (per element)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi . 5 T p Reverse Characteristics (per element)
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http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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