DF1506S [TYSEMI]
Glass passivated chip junctions, Low Forward Voltage Drop, High Current Capability; 玻璃钝化芯片路口，低正向压降，高电流能力
| 型号： | DF1506S |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Glass passivated chip junctions, Low Forward Voltage Drop, High Current Capability |
| 文件： | 总2页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DF15005S - DF1510S
DF-S
0.205 (5.2)
0.195 (5.0)
■ Features
0.047 (1.20)
0.040 (1.02)
● Glass passivated chip junctions
● Low Forward Voltage Drop, High Current Capability
● Surge Overload Rating to 50A Peak
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
45o
0.320 (8.13)
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.130 (3.3)
0.009 (0.241)
0.120 (3.05)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol DF15005S DF1501S DF1502S DF1504S DF1506S DF1508S DF1510S Unit
VRMM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VDC
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VRMS
IO
35
70
140
280
1.5
420
560
700
V
A
Average Forward Rectified Current TA=@ 40℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single half-sine-wave Superimposed on Rated Load
(JEDECmethod)
50
IFSM
A
1.1
Forward Voltage (per element) @ IF = 1.5A
VF
IR
V
10
500
Reverse Current(per element) @ Rated VR ,
TA = 25℃
TA = 125℃
μA
I2t
CJ
A2s
pF
10
25
Rating for fusing (t < 8.3ms)
Typical Total Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
40
RθJA
Tj, Tstg
℃/W
℃
-55 to +150
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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Product specification
DF15005S - DF1510S
Typical Characteristics
2.0
10
60 Hz Resistive or
Inductive load
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.5
1.0
1.0
0.1
0.5
0.01
0
40
60
100
120
140
0.8
0.4
1.0
1.4
80
0.6
1.2
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
50
100
10
1
Tj = 25°c
Single half-sine-Wave
(JEDEC Method)
f = 1.0 Mhz
Vsig = 50 mV p-p
40
30
20
10
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
Fig. 4 Typ Junction Capacitance (per element)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
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