关闭背景特效

FDB2570 [TYSEMI]

22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge; 22 A， 150 V. RDS （ ON）= 80米VGS = 10V开关速度快低栅极电荷

FDB2570


元器件型号：	FDB2570
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge 22 A， 150 V. RDS （ ON）= 80米VGS = 10V开关速度快低栅极电荷晶体栅极开关晶体管脉冲
PDF文件：	总2页 (文件大小：153K)
下载文档：	下载PDF数据表文档文件
型号参数：FDB2570参数

FDB2570L86Z

Power Field-Effect Transistor, 22A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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0 FAIRCHILD

FDB2570TR

Power Field-Effect Transistor, 22A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 FAIRCHILD

FDB2572

N-Channel PowerTrench MOSFET 150V, 29A, 54mз

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53 FAIRCHILD

FDB2572

rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A UIS Capability (Single Pulse and Repetitive Pulse)

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21 TYSEMI

FDB2572_NL

暂无描述

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0 FAIRCHILD

FDB-25P(05)

D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Locking, Plug,

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0 HRS

FDB-25PF

FD TYPE CONNECTOR FOR RIBBON CABLE

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20 HRS

FDB-25PF(05)

D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Locking, Plug,

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0 HRS

FDB-25S(05)

D Subminiature Connector, 25 Contact(s), Female, IDC Terminal, Locking, Socket,

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0 HRS

FDB-25SF

FD TYPE CONNECTOR FOR RIBBON CABLE

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8 HRS

FDB2614

200V N-Channel PowerTrench MOSFET

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77 FAIRCHILD

FDB2670

200V N-Channel PowerTrench MOSFET

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51 FAIRCHILD

FDB2670

19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge

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9 TYSEMI

FDB2670_NL

Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

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0 FAIRCHILD

FDB2670L86Z

Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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0 FAIRCHILD

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