FMMT625 [TYSEMI]
Collector current:IC=1A, Power dissipation :PC=625mW; 集电极电流IC = 1A ，功耗： PC = 625mW
| 型号： | FMMT625 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Collector current:IC=1A, Power dissipation :PC=625mW |
| 文件： | 总2页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ransistors
Product specification
FMMT625
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
3
● Collector current:IC=1A
● Power dissipation :PC=625mW
1
2
+0.1
+0.05
0.95-0.1
0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
150
V
V
150
5
V
Collector current
1
0.5
A
Base current
IB
A
Power dissipation
PC
625
mW
℃
Operating and storage temperature range
Tj,Tstg
-55 to +150
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ransistors
Product specification
FMMT625
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
150
150
5
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CBO
IC=100μA
V(BR)CEO IC=10mA
V
V(BR)EBO
ICBO
V
IE=100μA
VCB=130V
VEB=4V
100
100
100
nA
nA
nA
mV
mV
mV
V
Emitter cut-off current
IEBO
Collector emitter cutoff current
ICES
VCES=130V
IC=0.1A,IB=10mA
IC=0.1A,IB=1mA
IC=1A,IB=50mA
26
110
180
0.85
0.74
400
450
45
50
200
300
1.0
1.0
Collector-emitter saturation voltage *
VCE(sat)
Base-Emitter Saturation Voltage *
Base-Emitter Turn-On Voltage *
VBE(sat) IC=1A, IB=50mA*
VBE(on) IC=1A, VCE=10V*
IC=10mA, VCE=10V*
V
200
300
30
IC=200mA,VCE=10V
hFE
DC current gain
IC=1A, VCE=10V*
IC=3A, VCE=10V*
15
Output capacitance
Transition frequecy
Cob
fT
VCB=10V,f=1MHz
6
10
pF
IC=50mA,VCE=10V,f=100MHz
100
135
MHz
* Pulse test: tp ≤ 300 μs; d ≤ 0.02.
■ Marking
Marking
625
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