KDB2670 [TYSEMI]

19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge; 19 A, 200 V. RDS ( ON) = 130米VGS = 10V开关速度快低栅极电荷
KDB2670
型号: KDB2670
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
19 A, 200 V. RDS ( ON) = 130米VGS = 10V开关速度快低栅极电荷

栅极 开关
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KDB32

Ideally Suited for Automatic Assembly

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0 DYELEC

KDB325

Ideally Suited for Automatic Assembly

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0 DYELEC

KDB325S

Ideally Suited for Automatic Assembly

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0 DYELEC

KDB32S

Ideally Suited for Automatic Assembly

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0 DYELEC

KDB3632

rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A UIS Capability (Single Pulse and Repetitive Pulse)

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8 TYSEMI

KDB3632

N-Channel PowerTrench MOSFET

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14 KEXIN

KDB3652

N-Channel PowerTrench MOSFET

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10 KEXIN

KDB3652

rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V

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15 TYSEMI

KDB3672

rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V

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9 TYSEMI

KDB3672

N-Channel PowerTrench MOSFET

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9 KEXIN

KDB3682

N-Channel PowerTrench MOSFET

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5 KEXIN

KDB3682

rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V

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10 TYSEMI

KDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

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10 KEXIN

KDB5690

N-Channel PowerTrenchTMMOSFET

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30 KEXIN

KDB5690

32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V

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9 TYSEMI