关闭背景特效

KDW2504P [TYSEMI]

3.8 A, - 20 V. RDS(ON) = 0.043 Low gate charge High performance trench technology for extremely low RDS(ON); 3.8 A， - 20 V的RDS （ ON） = 0.043低栅极电荷高性能沟道技术极低的RDS （ ON）

KDW2504P


元器件型号：	KDW2504P
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	3.8 A, - 20 V. RDS(ON) = 0.043 Low gate charge High performance trench technology for extremely low RDS(ON) 3.8 A， - 20 V的RDS （ ON） = 0.043低栅极电荷高性能沟道技术极低的RDS （ ON）栅极
PDF文件：	总2页 (文件大小：143K)
下载文档：	下载PDF数据表文档文件
型号参数：KDW2504P参数

KDW2521C

N-Channel 5.5 A, 20 V P-Channel -3.8 A, 20 V High performance trench technology for extremely low RDS

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26 TYSEMI

KDW2521C

Complementary PowerTrench MOSFET

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12 KEXIN

KDW258P

P-Channel 1.8V Specified PowerTrench MOSFET

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6 KEXIN

KDY

BUSS CABLE LIMITER

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0 ETC

KDY23

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3

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23 ETC

KDY24

TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-3

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35 ETC

KDY25

TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 6A I(C) | TO-3

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11 ETC

KDY56

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 15A I(C) | TO-3

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17 ETC

KDY73

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-3

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9 ETC

KDY74

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-3

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15 ETC

KDY76

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | TO-3

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11 ETC

KDZ.33B

Zener diode

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16 DIODES

KDZ1.0B

Zener diode

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17 DIODES

KDZ1.1B

Zener diode

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24 DIODES

KDZ1.2B

Zener diode

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13 DIODES

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