KMBT5551 [TYSEMI]
Pb-Free Packages are Available; 无铅包可用
| 型号： | KMBT5551 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Pb-Free Packages are Available |
| 文件： | 总2页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Transistor
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Product specification
KMBT5551(MMBT5551)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
High Voltage Transistors
Pb-Free Packages are Available
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
180
Collector-emitter voltage
160
V
Emitter-base voltage
6
0.6
V
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
A
Pc
300
mW
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
180
160
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
VCBO
VCEO
VEBO
ICBO
IC = 100 ìA, IE = 0
IC = 1.0 mA, IB = 0
IE = 10 ìA, IC = 0
V
V
VCB = 120 V, IE = 0
VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
50
50
nA
nA
Emitter cutoff current
IEBO
80
100
50
DC current gain *
hFE
300
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
VCE(sat) IC = 50 mA, IB = 5.0 mA
VBE(sat) IC = 50 mA, IB = 5.0 mA
0.5
1.0
V
V
Transiston frequency
fT
VCE=10V,IC=10mA,f=100MHz
100
MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
Marking
Marking
G1
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
TT
Transistor
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Product specification
KMBT5551(MMBT5551)
Typical Characteristics
Fig.2 Collector Emitter Saturation Voltage
vs.Collector Current
Fig.1 Max Power Dissipation vs.
Ambient Temperature
Fig.3 DC Current Gain vs. Collector Current
Fig.4 Base Emitter Voltage vs.Collector Current
Fig.5 Gain Bandwidth Product vs.
Collector Current
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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