KQB6N25 [TYSEMI]

5.5A, 500 V. RDS(ON) = 1 VGS = 10 V Low gate charge (typical 6.6nC); 5.5A , 500V的RDS ( ON) = 1 VGS = 10V低栅极电荷(典型值6.6nC )
KQB6N25
型号: KQB6N25
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

5.5A, 500 V. RDS(ON) = 1 VGS = 10 V Low gate charge (typical 6.6nC)
5.5A , 500V的RDS ( ON) = 1 VGS = 10V低栅极电荷(典型值6.6nC )

栅极
文件: 总2页 (文件大小:205K)
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KQB6N70

6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)

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10 TYSEMI

KQB6N70

700V N-Channel MOSFET

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6 KEXIN

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11 KEXIN

KQB9N50

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8 TYSEMI

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12 KOA

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0 KOA

KQC0402TBK3N0C

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0 KOA

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0 KOA

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0 KOA

KQC0402TBK4N3C

General Purpose Inductor, 0.0043uH, 4.652%, 1 Element, Ceramic-Core, SMD, 0402, CHIP, 0402, ROHS COMPLIANT

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0 KOA

KQC0402TBK4N7C

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0 KOA

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4 KOA

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4 KOA

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3 KOA

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8 KOA