MMBTA55 [TYSEMI]
SOT-23 package; SOT- 23封装
| 型号： | MMBTA55 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SOT-23 package |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MMBTA55,MMBTA56
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
SOT-23 package
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Symbol
VCEO
VCBO
VEBO
IC
MMBTA55
-60
MMBTA56
-80
Unit
V
-60
-80
V
-4.0
V
-500
Collector current
mA
mW
Total Device Dissipation FR-5 Board(* 1)
Derate above 25
225
1.8
PD
RèJA
PD
mW/
/W
556
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate, (* 2)
Derate above 25
mW
300
2.4
mW/
417
150
Thermal Resistance, Junction-to-Ambient
Junction temperature
RèJA
Tj
/W
-55 to +150
Storage temperature
Tstg
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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Product specification
MMBTA55,MMBTA56
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-60
-80
-4.0
Typ
Max
Unit
V
Collector-emitter breakdown voltage* MMBTA55
MMBTA56
V(BR)CEO IC = -1.0 mA, IB = 0
V
Emitter-base breakdown voltage
Base cutoff current
V(BR)EBO IE = -100 ìA, IC = 0
V
ICES
ICBO
VCE = -60 V, IB = 0
-0.1
-0.1
-0.1
ìA
ìA
ìA
Collector cutoff current
MMBTA55
MMBTA56
VCB = -60 V, IE = 0
VCB = -80 V, IE = 0
IC = -10 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V
100
100
DC current gain
HFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC = -100 mA, IB = -10 mA
-0.25
-1.2
V
V
VBE(on)
fT
2.0%.
IC = -100 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V, f = 100
MHz
Current-gain-bandwidth product
50
MHz
* Pulse test: pulse width
300 ìs, duty cycle
hFE Classification
TYPE
MMBTA55
2H
MMBTA56
2G
Marking
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sales@twtysemi.com
4008-318-123
相关型号：
MMBTA55-13
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
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