MMBZ5256B [TYSEMI]
Planar Die Construction; 平面模具结构
| 型号： | MMBZ5256B |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Planar Die Construction |
| 文件： | 总3页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MMBZ5256B
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Planar Die Construction
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VF
Rating
0.9
Unit
V
Forward Voltage
@ IF = 10mA
Power Dissipation *1
Pd
350
mW
Thermal Resistance, Junction to Ambient Air *1
Operating and Storage Temperature Range
R
JA
357
/W
Tj, TSTG
-65 to +150
*1. Part mounted on FR-4 PC board with recommended pad layout
Electrical Characteristics @TA=25 unless otherwise specified
Maximum ZenerImpedance
*2
Maximum Reverse
Leakage Current *1
Zener Voltage Range *1
Type Number
ZZK @ IZK=
ZZT @ IZT
Vz @IZT
IZT
IR
@ VR
0.25mA
Nom (V)
30
Min (V)
28.5
Max (V)
31.5
mA
4.2
uA
V
MMBZ5256B
49
600
0.1
23
*1. Short duration test pulse used to minimize self-heating effect.
*2. f = 1KHz.
Marking
Marking
KM1
1
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Product specification
MMBZ5256B
1000
Tj = 25 °C
0.4
0.3
100
0.2
0.1
0
VR = 1V
VR = 2V
10
10
1
100
0
150
25
50
75
100
125
VZ, NOMINAL ZENER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
Fig. 2 Total Capacitance vs Nominal Zener Voltage
100
1000
IZ = 1.0mA
100
10
10
1
1
1
10
100
1000
10
1
100
VZ, NOMINAL ZENER VOLTAGE (V)
PULSE WIDTH (ms)
Fig. 4 Maximum Non-repetitive Surge Power
Fig. 3 Zener Voltage vs. Zener Impedence
1
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4008-318-123
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Product specification
MMBZ5256B
30
20
10
0
Tj = 25°C
10
50
T = 25°C
j
5V6
12
6V8
40
30
20
8V2
15
Nominal Zener Voltage
Test current IZ
18
22
27
33
36 39
Test Current IZ
10
20mA
0
0
1
2
3
4
5
6
8
9
10
7
0
10
VZ, ZENER VOLTAGE (V)
Fig. 6 Zener Breakdown Characteristics
20
30
40
VZ, ZENER VOLTAGE (V)
Fig. 5 Zener Breakdown Characteristics
1
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4008-318-123
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