PMV160UP [TYSEMI]
20 V, 1.2 A P-channel Trench MOSFET High-side loadswitch Switching circuits; 20 V ， 1.2 A P沟道沟槽MOSFET高侧loadswitch开关电路
| 型号： | PMV160UP |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 20 V, 1.2 A P-channel Trench MOSFET High-side loadswitch Switching circuits |
| 文件： | 总4页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-8
-
V
[1]
ID
VGS = -4.5 V; Tamb 25 °C
-1.2
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
-
170
210
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
S
SOT23 (TO-236AB)
017aaa257
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Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMV160UP
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
PMV160UP
Marking code[1]
NH%
[1] % = placeholder for manufacturing site code
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Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-8
V
[1]
[1]
ID
VGS = -4.5 V; Tamb 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-1.2
-0.8
-4
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
335
480
mW
mW
-
Tsp = 25 °C
-
2170 mW
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
-0.5
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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Product specification
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.45 -0.7
-0.95
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C
VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C
VDS = -5 V; ID = -1.2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
-10
-100
-100
210
328
270
380
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
170
265
210
280
3.7
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
3.3
1
4
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
0.5
365
42
30
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
-
-
-
-
7
-
-
-
-
ns
ns
ns
ns
26
35
17
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -0.5 A; VGS = 0 V; Tj = 25 °C
-
-0.7
-1.2
V
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