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PZT3906 [TYSEMI]

Collector Power Dissipation: PC=1W; 集电极耗散功率： PC = 1W
PZT3906
型号： PZT3906
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

Collector Power Dissipation: PC=1W
集电极耗散功率： PC = 1W

晶体 晶体管 开关 光电二极管 PC
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Product specification  
PZT3906  
SOT-223  
Unit: mm  
+0.2  
■ Features  
+0.2  
3.50-0.2  
6.50-0.2  
● Collector Power Dissipation: PC=1W  
● Collector Current: IC= -200mA  
● Complementary NPN Type Available(PZT3904)  
+0.2  
0.90-0.2  
+0.1  
3.00-0.1  
+0.3  
7.00-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
3 Emitter  
0.70-0.1  
2.9  
4.6  
4 Collector  
■ Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector- Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-40  
Collector - Emitter Voltage  
Emitter - Base Voltage  
-40  
V
-5  
-200  
V
Collector Current- Continuous  
Power Dissipation  
mA  
W
℃
PD  
1
Junction and Storage Temperature  
TJ, Tstg  
-55 to 150  
■ Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
-40  
-40  
-5  
Typ Max  
Unit  
V
Collector - base breakdown voltage  
Collector - emitter breakdown voltage  
Emitter- base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Ic= -10 μA， IE=0  
Ic= -1 mA， IB=0  
IE= -10 μA， IC=0  
VCB=-30V,IE=0  
V
V
-0.1  
-0.1  
300  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=-5V,IC=0  
VCE= -1V, IC= -10mA  
VCE= -1V, IC= -50mA  
100  
60  
DC current gain  
hFE  
Collector- emitter saturation voltage  
Base - emitter saturation voltage  
Delay time  
VCE(sat) IC=-50 mA, IB= -5mA  
VBE(sat) IC=-50 mA, IB= -5mA  
-0.4  
-0.95  
35  
V
V
td  
tr  
VCC=-3.0V,VBE=0.5V  
IC=-10mA,IB1=-1.0mA  
VCC=-3.0V,IC=-10mA  
IB1=IB2=-1.0mA  
ns  
Rise time  
35  
Storage time  
ts  
tf  
225  
75  
ns  
Fall time  
Transition frequency  
fT  
VCE= -20V, IC= -10mA, f=100MHz  
250  
MHz  
■ Marking  
Marking  
3906  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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