SI9926DY [TYSEMI]

Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V; 漏源电压VDS 20 V栅源电压VGS -10 V
SI9926DY
型号: SI9926DY
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
漏源电压VDS 20 V栅源电压VGS -10 V

晶体 晶体管 开关 脉冲 光电二极管 栅
文件: 总2页 (文件大小:347K)
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SI9926DYL86Z

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 FAIRCHILD

SI9926DY-T1

Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 VISHAY

SI9926DY-T1-E3

Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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0 VISHAY

SI9928DY

Complimentary 20-V (D-S) MOSFET

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17 VISHAY

SI9928DY

Complimentary 20-V (D-S) MOSFET

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114 VISHAY

SI9928DY

Complimentary 20-V (D-S) MOSFET

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17 VISHAY

SI9928DY

Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon,

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1 TEMIC

SI9933ADY

Dual P-Channel 20-V (D-S) MOSFET

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162 VISHAY

SI9933ADY

Dual P-Channel 20-V (D-S) MOSFET

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412 VISHAY

SI9933ADY

Dual P-Channel PowerTrench MOSFET

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158 FAIRCHILD

SI9933ADY_NL

Power Field-Effect Transistor, 3.4A I(D), 20V, 0.075ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 FAIRCHILD

SI9933ADYD84Z

Power Field-Effect Transistor, 3.4A I(D), 20V, 0.075ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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1 FAIRCHILD

SI9933ADYF011

Power Field-Effect Transistor, 3.4A I(D), 20V, 0.075ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 FAIRCHILD

SI9933BDY

Dual P-Channel 2.5-V (G-S) MOSFET

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114 VISHAY

SI9933BDY

Dual P-Channel 2.5-V (G-S) MOSFET

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29 VISHAY