ZXMN6A07FTA [TYSEMI]
60V SOT23 N-CHANNEL; SOT23封装60V N沟道
| 型号： | ZXMN6A07FTA |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 60V SOT23 N-CHANNEL |
| 文件： | 总3页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMN6A07F
60V SOT23 N-channel enhancement mode mosfet
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.250 @ V = 10V
1.4
1.2
GS
60
0.350 @ V = 4.5V
GS
Description
D
S
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
G
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
S
SOT23 package
D
Applications
•
•
•
•
DC-DC converters
G
Power management functions
Relay and solenoid driving
Motor control
Top view
Ordering information
Device
Reel size
(inches)
Tape width Quantityper
(mm)
reel
ZXMN6A07FTA
7
8
3,000
Device marking
7N6
sales@twtysemi.com
http://www.twtysemi.com
4008-318-123
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Product specification
Absolute maximum ratings
ZXMN6A07F
Parameter
Symbol
V
Limit
Unit
Drain-source voltage
60
V
DSS
Gate-source voltage
V
± 20
V
A
GS
(b)
I
1.4
Continuous drain current @ V = 10V; T
=25°C
D
GS
amb
(b)
(a)
1.1
1.2
@ V = 10V; T
=70°C
GS
amb
@ V = 10V; T
=25°C
GS
amb
(c)
I
6.9
1
A
A
Pulsed drain current
DM
(b)
I
Continuous source current (body diode)
S
(c)
I
6.9
625
A
Pulsed source current (body diode)
SM
(a)
P
mW
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
D
amb
5
mW/°C
mW
(b)
P
806
=25°C
D
amb
6.4
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
R
200
°C/W
⍜JA
⍜JA
Junction to ambient
R
155
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
sales@twtysemi.com
http://www.twtysemi.com
4008-318-123
2 of 3
Product specification
ZXMN6A07F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min. Typ. Max. Unit Conditions
Drain-source breakdown
voltage
V
60
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
1
A
nA
V
V
= 60V, V =0V
GS
DSS
GSS
DS
Gate-body leakage
I
100
V
= 20V, V =0V
DS
GS
Gate-source threshold voltage
V
1.0
3.0
I = 250A, V =V
D DS GS
GS(th)
DS(on)
Static drain-source on-state
resistance
R
0.250
0.350
⍀
V
= 10V, I = 1.8A
D
GS
GS
DS
(*)
⍀
V
V
= 4.5V, I = 1.3A
D
(*)(‡)
g
2.3
S
= 15V, I = 1.8A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
166
19.5
8.7
pF
pF
pF
V
= 40V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
C
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
1.8
1.4
ns
ns
ns
ns
V
= 30V, V = 10V
DD GS
d(on)
I = 1.8A
D
r
R ≈ 6.0⍀
G
Turn-off delay time
Fall time
4.9
d(off)
f
2.0
Total gate charge
Q
1.65
V
= 30V, V = 5V
DS GS
g
I = 1.8A
D
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
3.2
nC
nC
nC
V
= 30V, V = 10V
DS GS
g
I = 1.8A
D
0.67
0.82
gs
gd
(*)
V
0.80
0.95
V
T =25°C, I = 0.45A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
20.5
21.3
ns T =25°C, I = 1.8A,
j F
Reverse recovery time
rr
di/dt=100A/s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
sales@twtysemi.com
http://www.twtysemi.com
4008-318-123
3 of 3
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