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元器件品牌
1N5711WS
[TYSEMI]
Low Forward Voltage Drop Guard Ring Construction for Transient Prote; 低正向压降保护环结构瞬态Prote
元器件型号：
1N5711WS
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
Low Forward Voltage Drop Guard Ring Construction for Transient Prote
低正向压降保护环结构瞬态Prote
二极管
PDF文件：
总1页 (文件大小：58K)
下载文档：
下载PDF数据表文档文件
型号参数：1N5711WS参数
查看货源
1N5711WS_08
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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12
DIODES
1N5711WS_1
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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22
DIODES
1N5711WS-7
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC PACKAGE-2
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0
DIODES
1N5711WS-7-F
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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54
DIODES
1N5711WS-TP
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
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156
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0
MCC
1N5712
SMALL SIGNAL SCHOTTKY DIODES
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156
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35
BILIN
1N5712
Schottky Barrier Diodes for General Purpose Applications
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156
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201
AGILENT
1N5712
SMALL SIGNAL SCHOTTKY DIODES
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156
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17
JINANJINGHENG
1N5712
SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT
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34
MICROSEMI
1N5712
Schottky Barrier Diodes for General Purpose Applications
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156
-
11
NJSEMI
1N5712
Small Signal Schottky Diodes
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156
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22
LUGUANG
1N5712
SMALL SINGAL SCHOTTKY DIODES
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156
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37
GXELECTRONICS
1N5712-1
SCHOTTKY BARRIER DIODES
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156
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9
MICROSEMI
1N5712-1
SCHOTTKY BARRIER DIODES
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156
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43
CDI-DIODE
1N5712-1
SCHOTTKY BARRIER DIODES
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32
MICROSEMI
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