关闭背景特效

1SS272 [TYSEMI]

Low Forward Voltage:VF(3) =0.92 V(Typ.) Small Total Capacitance: CT = 0.9pF(Typ.); 低正向电压： VF （ 3 ）= 0.92 V（典型值）小总电容： CT = 0.9pF （典型值）

1SS272


元器件型号：	1SS272
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Low Forward Voltage:VF(3) =0.92 V(Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) 低正向电压： VF （ 3 ）= 0.92 V（典型值）小总电容： CT = 0.9pF （典型值）
PDF文件：	总1页 (文件大小：59K)
下载文档：	下载PDF数据表文档文件
型号参数：1SS272参数

1SS272(TE85R,F)

Rectifier Diode

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2 TOSHIBA

1SS272_07

Ultra High Speed Switching Application

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23 TOSHIBA

1SS272TE85R

TOSHIBA Diode Silicon Epitaxial Planar Type

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25 TOSHIBA

1SS277

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

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27 HITACHI

1SS277

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28 ETC

1SS277WT

BAND SWITCHING DIODE

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11 SEMTECH_ELEC

1SS286

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

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51 RENESAS

1SS286

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

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93 HITACHI

1SS286

SILICON, MIXER DIODE, DO-34, GLASS, MHD, 2 PIN

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1 RENESAS

1SS286-E

暂无描述

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0 RENESAS

1SS286TA

SILICON, MIXER DIODE, DO-34

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0 RENESAS

1SS286TAX

暂无描述

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0 HITACHI

1SS286TD

Mixer Diode, Silicon, DO-34

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0 HITACHI

1SS286TD

SILICON, MIXER DIODE, DO-34

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0 RENESAS

1SS286TD-E

SILICON, MIXER DIODE, DO-34

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0 RENESAS

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