关闭背景特效

1SS302 [TYSEMI]

Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ); 低正向电压VF （ 3 ） = 0.9 V（典型值）快速反向恢复时间： TRR = 1.6纳秒（典型值）

1SS302


元器件型号：	1SS302
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) 低正向电压VF （ 3 ） = 0.9 V（典型值）快速反向恢复时间： TRR = 1.6纳秒（典型值）二极管光电二极管
PDF文件：	总1页 (文件大小：69K)
下载文档：	下载PDF数据表文档文件
型号参数：1SS302参数

1SS302(T5LFT)

Rectifier Diode

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0 TOSHIBA

1SS302(TE85L,F)

Diode Switching 85V 0.1A 3-Pin USM T/R

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1 TOSHIBA

1SS302,LF(J

0.1A, 85V, 2 ELEMENT, SILICON, SIGNAL DIODE

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0 TOSHIBA

1SS302_07

Ultra High Speed Switching Applications

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45 TOSHIBA

1SS302A

Switching Diode

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5 TOSHIBA

1SS302A,LF

DIODE SW 80V 100MA USM SC70

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0 TOSHIBA

1SS302A,LF(T

Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

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0 TOSHIBA

1SS302T5LFH

Ultra High Speed Switching Applications

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33 TOSHIBA

1SS302TE85L

TOSHIBA Diode Silicon Epitaxial Planar Type

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17 TOSHIBA

1SS302TE85L

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

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0 TOSHIBA

1SS302TE85LF

Ultra High Speed Switching Applications

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35 TOSHIBA

1SS302TE85R,F

Rectifier Diode

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0 TOSHIBA

1SS302TE85R,F

Rectifier Diode

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0 TOSHIBA

1SS303

Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.

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19 TYSEMI

1SS303

HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE

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13 KEXIN

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