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1SS321 [TYSEMI]

Low forward voltage: VF = 0.42 V(Typ) Low reverse current: IR =500 nA(Max); 低正向电压VF = 0.42 V（典型值）低反向电流： IR = 500 nA的（最大）

1SS321


元器件型号：	1SS321
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Low forward voltage: VF = 0.42 V(Typ) Low reverse current: IR =500 nA(Max) 低正向电压VF = 0.42 V（典型值）低反向电流： IR = 500 nA的（最大）二极管光电二极管
PDF文件：	总1页 (文件大小：58K)
下载文档：	下载PDF数据表文档文件
型号参数：1SS321参数

1SS321(SAWAF,F)

Rectifier Diode, Schottky, 2 Element, 0.05A, 12V V(RRM), Silicon

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0 TOSHIBA

1SS321_07

TOSHIBA Diode Silicon Epitaxial Planar Type

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22 TOSHIBA

1SS321TE85L

暂无描述

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0 TOSHIBA

1SS321TE85LF

Low-Voltage High-Speed Switching

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17 TOSHIBA

1SS321TE85R

暂无描述

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0 TOSHIBA

1SS321TE85R2

DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

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0 TOSHIBA

1SS322

Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5A (Typ)

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31 TYSEMI

1SS322

LOW VOLTAGE HIGH SPEED SWITCHING

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33 KEXIN

1SS322

Low Voltage High Speed Switching

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38 TOSHIBA

1SS322

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

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98 TOSHIBA

1SS322(T5L,PP,F)

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon

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0 TOSHIBA

1SS322_07

Low Voltage High Speed Switching

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18 TOSHIBA

1SS322TE85R

DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

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0 TOSHIBA

1SS335

High reliability with high surge current handling capability.

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125 HTSEMI

1SS336

Small package Low forward voltage: VF3 = 0.84 V(Typ). Small total capacitance:CT = 7pF(Typ).

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12 TYSEMI

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