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2SA1411 [TYSEMI]

Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V; 非常高的DC电流增益：的hFE = 500〜 1600高VEBO电压： VEBO = -10V

2SA1411


元器件型号：	2SA1411
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V 非常高的DC电流增益：的hFE = 500〜 1600高VEBO电压： VEBO = -10V
PDF文件：	总1页 (文件大小：60K)
下载文档：	下载PDF数据表文档文件
型号参数：2SA1411参数

2SA1411-LM15

Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

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0 NEC

2SA1411-T1B

Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

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0 NEC

2SA1411-T1BM15

Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

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0 NEC

2SA1411-T2BM15

Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

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0 NEC

2SA1411-T2BM16

Small Signal Bipolar Transistor, 0.15A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN

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0 NEC

2SA1412

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

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91 NEC

2SA1412

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

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125 NEC

2SA1412(0)-ZK-AZ

TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),TO-252

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0 RENESAS

2SA1412(0)-ZK-E1-AZ

TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),TO-252

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0 RENESAS

2SA1412(0)-ZL-E2-AZ

TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),TO-252

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0 RENESAS

2SA1412-AZ

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

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0 RENESAS

2SA1412K

BJT

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38 ETC

2SA1412L

BJT

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17 ETC

2SA1412-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

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61 NEC

2SA1412-Z

PNP Silicon Transistor

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20 KEXIN

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