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元器件品牌
2SA1415
[TYSEMI]
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V); 采用FBET工艺高击穿电压（ VCEO = 160V ）
元器件型号：
2SA1415
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
采用FBET工艺高击穿电压（ VCEO = 160V ）
PDF文件：
总3页 (文件大小：470K)
下载文档：
下载PDF数据表文档文件
型号参数：2SA1415参数
查看货源
2SA1415_15
PNP Transistors
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156
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0
KEXIN
2SA1415-HF_15
PNP Transistors
Warning
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156
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0
KEXIN
2SA1415R
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 140MA I(C) | SOT-89
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29
ETC
2SA1415-R
PNP Transistors
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156
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0
KEXIN
2SA1415-R-HF
PNP Transistors
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156
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0
KEXIN
2SA1415S
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 140MA I(C) | SOT-89
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23
ETC
2SA1415-S
PNP Transistors
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0
KEXIN
2SA1415-S-HF
PNP Transistors
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156
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0
KEXIN
2SA1415T
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 140MA I(C) | SOT-89
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16
ETC
2SA1415-T
PNP Transistors
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156
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0
KEXIN
2SA1415-T-HF
PNP Transistors
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
KEXIN
2SA1416
High-Voltage Switching Applications
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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49
SANYO
2SA1416
High-Voltage Switching Applications
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43
SANYO
2SA1416
High-Voltage Switching Applications
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156
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39
KEXIN
2SA1416
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
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20
TYSEMI
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