关闭背景特效

2SB1260 [TYSEMI]

High breakdown voltage and high current.BVCEO= -80V, IC=-1A PNP silicon transistor; 高击穿电压，高current.BVCEO = -80V ， IC = -1A PNP硅晶体管

2SB1260


元器件型号：	2SB1260
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	High breakdown voltage and high current.BVCEO= -80V, IC=-1A PNP silicon transistor 高击穿电压，高current.BVCEO = -80V ， IC = -1A PNP硅晶体管晶体晶体管
PDF文件：	总1页 (文件大小：76K)
下载文档：	下载PDF数据表文档文件
型号参数：2SB1260参数

2SB1260_08

POWER TRANSISTOR

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21 UTC-IC

2SB1260_09

Power Transistor (-80V, -1A)

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26 ROHM

2SB1260_1

Power Transistor (−80V, −1A)

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41 ROHM

2SB1260_11

Power Transistor (-80V, -1A)

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30 ROHM

2SB1260_12

Power Transistor

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32 ROHM

2SB1260_15

TRANSISTOR (PNP)

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2 WINNERJOIN

2SB1260G-X-AB3-R

POWER TRANSISTOR

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25 UTC-IC

2SB1260G-X-TN3-R

POWER TRANSISTOR

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22 UTC-IC

2SB1260L-P-AB3-B

POWER TRANSISTOR

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14 UTC-IC

2SB1260L-P-AB3-K

POWER TRANSISTOR

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15 UTC-IC

2SB1260L-P-AB3-R

POWER TRANSISTOR

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9 UTC-IC

2SB1260L-P-TN3-B

POWER TRANSISTOR

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13 UTC-IC

2SB1260L-P-TN3-F-R

Transistor

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0 UTC-IC

2SB1260L-P-TN3-K

POWER TRANSISTOR

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10 UTC-IC

2SB1260L-P-TN3-R

POWER TRANSISTOR

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16 UTC-IC

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