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2SC3649 [TYSEMI]

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity; 采用FBET的， MBIT流程击穿电压高，电流容量大

2SC3649


元器件型号：	2SC3649
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity 采用FBET的， MBIT流程击穿电压高，电流容量大
PDF文件：	总3页 (文件大小：566K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC3649参数

2SC3649_15

NPN Transistors

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0 KEXIN

2SC3649-HF_15

NPN Transistors

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0 KEXIN

2SC3649R

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247

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11 ETC

2SC3649-R

NPN Transistors

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0 KEXIN

2SC3649-R-HF

NPN Transistors

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0 KEXIN

2SC3649S

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247

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33 ETC

2SC3649-S

NPN Transistors

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0 KEXIN

2SC3649-S-HF

NPN Transistors

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0 KEXIN

2SC3649S-TD-E

Bipolar Transistor

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1 ONSEMI

2SC3649S-TD-H

Bipolar Transistor

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0 ONSEMI

2SC3649T

TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-247

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23 ETC

2SC3649-T

NPN Transistors

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0 KEXIN

2SC3649-T-HF

NPN Transistors

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0 KEXIN

2SC3649T-TD-E

Bipolar Transistor

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0 ONSEMI

2SC3649T-TD-H

Bipolar Transistor

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0 ONSEMI

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