2SC3650 [TYSEMI]

High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage; 高直流电流增益(HFE = 800〜 3200 ) 。低集电极 - 发射极饱和电压
2SC3650
元器件型号: 2SC3650
生产厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用:

High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
高直流电流增益(HFE = 800〜 3200 ) 。低集电极 - 发射极饱和电压

晶体 晶体管 放大器
PDF文件: 总1页 (文件大小:62K)
下载文档:  下载PDF数据表文档文件
型号参数:2SC3650参数

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0 JIANGSU

2SC3650_11

1.2 A , 30 V NPN Plastic-Encapsulate Transistor

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17 SECOS

2SC3650_15

TRANSISTOR

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1 WINNERJOIN

2SC3651

NPN Epitaxial Planar Silicon Transistors

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39 KEXIN

2SC3651

High hFE, Low-Frequency General-Purpose Amplifier Applications

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25 SANYO

2SC3651

High-hFE, Low-Frequency General-Purpose Amp Applications

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58 SANYO

2SC3651

High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage

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11 TYSEMI

2SC3651

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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0 ONSEMI

2SC3651_1

High hFE, Low-Frequency General-Purpose Amplifier Applications

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11 SANYO

2SC3651-TD-E

TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89

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0 ONSEMI

2SC3652

SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER

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67 HITACHI

2SC3652

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-126MOD, 3 PIN

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0 RENESAS

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18 ETC

2SC3653

PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

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23 SANYO

2SC3654

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92

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20 ETC