2SC4003 [TYSEMI]

High breakdown voltage Adoption of MBIT process Excellent hFE linearity; 高击穿电压收养MBIT过程中出色的线性度的hFE
2SC4003
型号: 2SC4003
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

High breakdown voltage Adoption of MBIT process Excellent hFE linearity
高击穿电压收养MBIT过程中出色的线性度的hFE

文件: 总2页 (文件大小:72K)
下载:  下载PDF数据表文档文件

2SC4003D

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 200MA I(C) | TO-252

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44 ETC

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0 JIANGSU

2SC4003E

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 200MA I(C) | TO-252

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29 ETC

2SC4004

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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120 PANASONIC

2SC4004

Silicon NPN Power Transistors

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10 ISC

2SC4004

Silicon NPN Power Transistors

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27 ISC

2SC4004

Silicon NPN Power Transistors

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28 JMNIC

2SC4004

Silicon NPN Power Transistors

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19 SAVANTIC

2SC4004_15

Silicon NPN Power Transistors

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0 JMNIC

2SC4004_2014

Silicon NPN Power Transistors

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0 JMNIC

2SC4005

Driver Applications

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38 SANYO

2SC4006

Driver Applications

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37 SANYO

2SC4007

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

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27 ROHM

2SC4007

isc Silicon NPN Power Transistor

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36 ISC

2SC4007/DE

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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0 ROHM